Thermodynamic analysis of the deposition of (Ga, Al)As epitaxial layers prepared by the MOCVD technique

[img]PDF - Authorized users only
Language: English
313Kb
Title:Thermodynamic analysis of the deposition of (Ga, Al)As epitaxial layers prepared by the MOCVD technique
Creators:
Leitner, Jindřich
Voňka, Petr
Mikulec, Jan
Stejskal, Josef
Klíma, Přemysl
Journal or Publication Title:
Collection of Czechoslovak Chemical Communications, 56, 4, pp. 865-873

Abstract

Based on a detailed thermodynamic analysis of the Ga-Al-As-C-H system, starting conditions were determined under with the reaction of trimethylgallium, trimethylaluminium and arsine in hydrogen results in the formation of a single condensed phase, viz. solid (Ga, Al)As. At initial ratios B<sup>V</sup>/A<sup>III</sup> < 1, liquid Ga-Al-As and solid Al<sub>4</sub>C<sub>3</sub> are also formed. At high initial concentrations of the A<sup>III</sup>-element alkyl derivatives, solid graphite also emerges, particularly at elevated temperatures and reduced pressures. The calculated composition of the solid (Ga, Al)As is compared with experimental data.

Title:Thermodynamic analysis of the deposition of (Ga, Al)As epitaxial layers prepared by the MOCVD technique
Creators:
Leitner, Jindřich
Voňka, Petr
Mikulec, Jan
Stejskal, Josef
Klíma, Přemysl
Divisions:Life and Chemical Sciences > Institute of Organic Chemistry and Biochemistry > Collection of Czechoslovak Chemical Communications
Journal or Publication Title:Collection of Czechoslovak Chemical Communications
Volume:56
Number:4
Page Range:pp. 865-873
ISSN:0010-0765
E-ISSN:1212-6950
Publisher:Institute of Organic Chemistry and Biochemistry
Related URLs:
URLURL Type
http://dx.doi.org/10.1135/cccc19910865UNSPECIFIED
ID Code:5003
Item Type:Article
Deposited On:22 Feb 2010 11:28
Last Modified:22 Feb 2010 10:28

Citation

Leitner, Jindřich; Voňka, Petr; Mikulec, Jan; Stejskal, Josef; Klíma, Přemysl (1991) Thermodynamic analysis of the deposition of (Ga, Al)As epitaxial layers prepared by the MOCVD technique. Collection of Czechoslovak Chemical Communications, 56 (4). pp. 865-873. ISSN 0010-0765

Repository Staff Only: item control page