Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

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Title:Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method
Creators:
Leitner, Jindřich
Voňka, Petr
Stejskal, Josef
Klíma, Přemysl
Hladina, Rudolf
Journal or Publication Title:
Collection of Czechoslovak Chemical Communications, 56, 10, pp. 2020-2029

Abstract

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Title:Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method
Creators:
Leitner, Jindřich
Voňka, Petr
Stejskal, Josef
Klíma, Přemysl
Hladina, Rudolf
Divisions:Life and Chemical Sciences > Institute of Organic Chemistry and Biochemistry > Collection of Czechoslovak Chemical Communications
Journal or Publication Title:Collection of Czechoslovak Chemical Communications
Volume:56
Number:10
Page Range:pp. 2020-2029
ISSN:0010-0765
E-ISSN:1212-6950
Publisher:Institute of Organic Chemistry and Biochemistry
Related URLs:
URLURL Type
http://dx.doi.org/10.1135/cccc19912020UNSPECIFIED
ID Code:5131
Item Type:Article
Deposited On:22 Feb 2010 11:31
Last Modified:22 Feb 2010 10:31

Citation

Leitner, Jindřich; Voňka, Petr; Stejskal, Josef; Klíma, Přemysl; Hladina, Rudolf (1991) Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method. Collection of Czechoslovak Chemical Communications, 56 (10). pp. 2020-2029. ISSN 0010-0765

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